Localization Progress of RF Power and ESC in Semiconductor Etching

Introduction

The semiconductor etching process relies heavily on critical components such as RF power supplies and electrostatic chucks (ESCs). Over the past year, Chinese domestic players have accelerated verification and mass production efforts, aiming to reduce dependency on foreign suppliers. EJER, as a reliable partner in the global semiconductor supply chain, offers humidity-sensitive device storage and protection solutions that effectively eliminate soldering defects caused by moisture absorption, complementing the ecosystem of high-precision components.

Verification Progress of Key Domestic Suppliers

Several leading domestic manufacturers have entered the qualification stage with major etching equipment makers. A top Chinese RF power supply supplier has completed initial reliability tests and is now undergoing long-term burn-in at a 12-inch logic fab, targeting full certification by mid-2025. Meanwhile, an emerging ESC producer has shipped over 100 units to domestic OEMs for process evaluation, achieving acceptable temperature uniformity and clamping force in nitride etching tests.

Another player focusing on ESC ceramic materials has secured a joint development agreement with a major equipment manufacturer, planning to integrate its product into a next-generation etcher. The verification cycle for these components typically spans 12-18 months, and the current batch of suppliers is expected to reach volume production by late 2025.

Gaps in Material Purity and Machining Precision

Despite progress, domestic RF power supplies still lag behind MKS in wide bandgap transistor matching and output linearity. For ESCs, Shinko's aluminum nitride grade maintains purity above 99.99% with surface roughness below 10 nm, while domestic alternatives are at 99.9% purity and 20-30 nm roughness, affecting particle generation and temperature stability.

Machining tolerance is another critical gap. High-end ESCs require planar flatness better than 5 µm, which domestic grinding and lapping processes achieve in only 60% of units versus 95% for Shinko. Material grain size control and binder homogeneity also need improvement to match the thermal conductivity of 180 W/m·K seen in leading products.

Catch-Up Strategies and Supply Chain Synergy

To close the gap, domestic firms are investing in advanced sintering furnaces and atomic lapping systems. Collaboration with material research institutes is yielding pilot batches of higher-purity ceramic powder. Several companies are also adopting in-situ metrology for real-time process control during ESC fabrication.

Supply chain co-development is accelerating: equipment makers are providing engineering feedback loops, while domestic chemical suppliers deliver tailored polishing slurries. Such synergy is expected to reduce the material purity gap by 0.05% per year and improve yield of precision parts by 10% annually over the next three years.

Conclusion

Domestic RF power and ESC development have entered a critical phase, with functional verification nearly complete and reliability qualification underway. While clear gaps remain in material science and ultra-precision manufacturing, focused R&D and cross-industry partnerships are steadily narrowing the distance to global benchmarks. With continued support from the ecosystem, including partners like EJER, the localization of these key semiconductor components appears achievable within a two-to-three-year horizon.